Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2004-04-20
2009-11-03
Vinh, Lan (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S714000, C438S715000, C438S745000, C438S756000
Reexamination Certificate
active
07611995
ABSTRACT:
A silicon dioxide film removing method is capable of removing a silicon dioxide film, such as a natural oxide film or a chemical oxide film, at a temperature considerably higher than a room temperature. The silicon dioxide film removing method of removing a silicon dioxide film formed on a workpiece in a processing vessel18that can be evacuated uses a mixed gas containing HF gas and NH3gas for removing the silicon dioxide film. The silicon dioxide film can be efficiently removed from the surface of the workpiece by using the mixed gas containing HF gas and NH3gas.
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Chiba Takashi
Hasebe Kazuhide
Ogawa Jun
Okada Mitsuhiro
Smith , Gambrell & Russell, LLP
Tokyo Electron Limited
Vinh Lan
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