Method and structure for strained FinFET devices

Details Method and structure for strained FinFET devices Method and structure for strained FinFET devices

2007-02-02

2009-10-13

Prenty, Mark (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S401000

Reexamination Certificate

active

07602021

ABSTRACT:
A method (and structure) of forming an electronic device includes forming at least one localized stressor region within the device.

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