Pick-up structure for DRAM capacitors

Details Pick-up structure for DRAM capacitors Pick-up structure for DRAM capacitors

2006-06-27

2009-06-30

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27091

Reexamination Certificate

active

07554148

ABSTRACT:
A pick-up structure for DRAM capacitors and a DRAM process are described. A substrate with trenches therein is provided, wherein the trenches include a first trench and the sidewall of each of the trenches is formed with a dielectric layer thereon. A conductive layer is formed on the surfaces of the substrate and the trenches, and then a patterned photoresist layer is formed on the conductive layer filling in the trenches and further covering the first trench. The exposed conductive layer is removed to form bottom electrodes in the trenches, and then the patterned photoresist layer is removed. A capacitor dielectric layer is formed on each bottom electrode, and then top electrodes are formed on the substrate filling up the trenches. A contact is then formed on the bottom electrode in the first trench, electrically connecting the substrate via the bottom electrode.

REFERENCES:
patent: 4918502 (1990-04-01), Kaga et al.
patent: 5691550 (1997-11-01), Kohyama
patent: 6144055 (2000-11-01), Takenaka
patent: 6316336 (2001-11-01), Blanchard
patent: I248660 (2006-02-01), None

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