Image sensor and fabricating method thereof

Details Image sensor and fabricating method thereof Image sensor and fabricating method thereof

2005-12-30

2009-08-25

Louie, Wai-Sing (Department: 2814)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C257S098000, C438S070000

Reexamination Certificate

active

07579209

ABSTRACT:
An image sensor includes the steps of forming a sublayer including a photodiode, a transistor and a metal line on a substrate, forming a pattern layer on the sublayer to be overlapped with the photodiode and to having a curved surface, and forming a combined color filter and microlens on the pattern layer to have a curved surface.

REFERENCES:
patent: 6577342 (2003-06-01), Wester
patent: 6861686 (2005-03-01), Lee et al.
patent: 2003/0197228 (2003-10-01), Okuda et al.
patent: 2005/0200734 (2005-09-01), Ahn et al.
patent: 2005/0224694 (2005-10-01), Yaung
patent: 2006/0138480 (2006-06-01), Adkisson et al.
patent: 2006/0261426 (2006-11-01), Hoague et al.

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