Method of forming a metal line of a semiconductor device

Details Method of forming a metal line of a semiconductor device Method of forming a metal line of a semiconductor device

2006-12-27

2009-10-13

Menz, Laura M (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S625000, C438S627000

Reexamination Certificate

active

07601632

ABSTRACT:
A first conductive layer is formed over a substrate in which contact holes are formed in an interlayer insulating layer. The first conductive layer is melted by an annealing process, thus coating the lower sidewalls of the contact holes and partially filling the contact holes. A second conductive layer is deposited with a method having selectivity with respect to the same material as the first conductive layer, thus fully filling the contact holes. A metal line is formed on the second conductive layer. The contact holes are completely filled with a conductive material and the load of a CMP process can be alleviated. Accordingly, the electrical characteristics of a device can be improved, process reliability can be improved, and process repeatablity can be improved.

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