Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design
Reexamination Certificate
2007-12-26
2009-12-08
Levin, Naum B (Department: 2825)
Computer-aided design and analysis of circuits and semiconductor
Nanotechnology related integrated circuit design
C716S030000, C716S030000, C703S002000
Reexamination Certificate
active
07631281
ABSTRACT:
A method for modeling a varactor with a MOS structure, and transforms an s-parameter obtained by the measurement using measurement equipment into a y-parameter and a z-parameter and then directly extracts parameters required for the modeling by means of equations in accordance with embodiments. The modeling can be made reflecting the parameters of the varactor varied according to frequency so that the more accurate RF modeling of a passive device can be made and the accurate modeling of the varactor can be made through the direct extraction method of the parameters so that the parameters of the varactor having a physical meaning can be extracted without using an expensive CAD tool, the time required for optimizing the parameters can be reduced, a computing time can be shorten, an initial condition dependence generated in performing the optimization is not required, and a pattern for a test is not required.
REFERENCES:
patent: 4525678 (1985-06-01), Lehmann et al.
patent: 2005/0216873 (2005-09-01), Singh et al.
Dongbu Hi-Tek Co., Ltd.
Levin Naum B
Sherr & Vaughn, PLLC
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