Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2004-12-22
2009-10-27
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C438S166000, C438S795000, C257SE21324, C257SE21475
Reexamination Certificate
active
07608527
ABSTRACT:
Even when the laser irradiation is performed under the same condition with the energy distribution of the beam spot shaped as appropriate, the energy given to the irradiated surface is not yet homogeneous. When a semiconductor film is crystallized to form a crystalline semiconductor film using such inhomogeneous irradiation energy, the crystallinity becomes inhomogeneous in this film, and the characteristic of semiconductor elements manufactured using this film varies. In the present invention, an irradiated object formed over a substrate is irradiated with a laser beam having the pulse width that is an order of picosecond (10−12second) or less.
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Tanaka Koichiro
Yamamoto Yoshiaki
Ghyka Alexander G
Nikmanesh Seahvosh J
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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