Wafer laser processing method

Details Wafer laser processing method Wafer laser processing method

2007-07-19

2009-10-13

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

By electromagnetic irradiation

C438S460000, C438S462000, C438S795000, C257SE21596, C257SE21602

Reexamination Certificate

active

07601616

ABSTRACT:
A wafer laser processing method for forming grooves along streets by applying a pulse laser beam along the streets for sectioning a plurality of devices of a wafer having the plurality of devices which are composed of a laminate consisting of an insulating film and a functional film, on the front surface of a substrate, wherein the pulse laser beam is set to have a repetition frequency of 150 kHz to 100 MHz and an energy per unit length of 5 to 25 J/m.

REFERENCES:
patent: 2005/0035100 (2005-02-01), Genda
patent: 2006/0009008 (2006-01-01), Kaneuchi et al.
patent: 2005-64231 (2005-03-01), None

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