Semiconductor integrated circuit

Details Semiconductor integrated circuit Semiconductor integrated circuit

Filed on

2006-03-21

Date issued

2009-02-03

Examiner

Richards, N Drew (Department: 2895)

Patent Class

Active solid-state devices (e.g., transistors, solid-state diode

SubClass

Field effect device

SubSubClass

Having insulated electrode

Other Related Categories

C257S371000, C257S370000, C257SE27030

Type

Reexamination Certificate

Status

active

Patent number

07485931

Description

ABSTRACT:
A semiconductor integrated circuit has complementary field-effect transistors, one formed in a semiconductor substrate, the other formed in a well in the substrate, and has four power-supply potentials: two supplied to the sources of the field-effect transistors, one supplied to the substrate, and one supplied to the well. An unwanted pair of parasitic bipolar transistors are formed in association with the field-effect transistors. An intentionally formed bipolar transistor operates in series with one of the unwanted parasitic transistors and as a current mirror for the other unwanted parasitic transistor, limiting the flow of unwanted current through the parasitic bipolar transistors.

REFERENCES:
patent: 5338986 (1994-08-01), Kurimoto
patent: 5-335500 (1993-12-01), None
patent: 9-8147 (1997-01-01), None

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