Memory module with failed memory cell repair function and...

Details Memory module with failed memory cell repair function and... Memory module with failed memory cell repair function and...

2007-11-21

2009-10-27

Nguyen, Dang T (Department: 2824)

Static information storage and retrieval

Read/write circuit

Having fuse element

C365S210130, C365S200000

Reexamination Certificate

active

07609579

ABSTRACT:
A memory module with failed memory cell repair function and method thereof are provided. The memory module comprises a programming interface, a mode register, a control signal generator, a fuse unit, a main memory array and a redundant memory array, wherein the programming interface is defined by selecting pins from a standard interface of the memory module. The programming interface is used to input a plurality of programming commands and a plurality of programming data. When the failed memory cells have occurred within the main memory array, the mode register will enter into a programming mode according to the programming commands, and the control signal generator will program the fuse unit, such that the redundant memory cells of the redundant memory array will be used to replace the failed memory cells. Thus, the fuse unit can be programmed directly through the standard interface, and the repairing period and the cost will be reduced efficiently.

REFERENCES:
patent: 5931962 (1999-08-01), Dang
patent: 2005/0099868 (2005-05-01), Oh

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