Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-07-14
2009-12-15
Parker, Kenneth A (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S369000, C257S336000, C257S351000, C257S346000, C257S408000, C257S411000, C257S389000
Reexamination Certificate
active
07633124
ABSTRACT:
A silicon nitride film having a thickness of 3 nm or less is formed on the surfaces of a P-well and N-well, as well as on the upper and side surfaces of a gate electrode, in which the silicon nitride film can be formed, for example, by exposing the surface of the P-well and N-well, and the upper and side surfaces of the gate electrode to a nitrogen-gas-containing plasma using a magnetron RIE apparatus. Then, pocket layers, extension layers and source/drain layers are formed while leaving the silicon nitride film unremoved.
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Japanese Office Action dated Oct. 16, 2007, issued in corresponding Japanese Application No. 2002-167637.
Prior Art Information List.
Japanese Office Action dated Feb. 19, 2008; issued in corresponding Japanese Application No. 2002-167637.
Fujitsu Microelectronics Limited
Nguyen Joseph
Parker Kenneth A
Westerman Hattori Daniels & Adrian LLP
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