Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2005-12-02

2009-08-11

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S586000, C438S592000, C438S595000, C438S596000, C257SE21428, C257SE21433, C257SE21444, C257SE21625, C257SE21626, C257SE29135, C257SE29255

Reexamination Certificate

active

07572719

ABSTRACT:
A method of manufacturing a semiconductor device is provided. The method includes: sequentially forming an oxide layer and a nitride layer on a substrate having a gate insulating layer and a gate formed in the order named thereon; forming a spacer at both sidewalls of the gate by etching the nitride layer; forming a source region and a drain region at both sides of the spacer in the substrate; removing the oxide layer formed on the gate and the substrate; partially removing surfaces of the gate, the source region and the drain region from which the oxide layer is removed; and depositing and thermally annealing a metal layer on the surfaces of the gate, source and drain whose surfaces are partially removed, to form a salicide layer.

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