Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-05-16
2009-11-17
Monbleau, Davienne (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S342000, C257S344000, C257S403000, C257SE29278
Reexamination Certificate
active
07619288
ABSTRACT:
A method for manufacturing a thin film transistor substrate includes a step of forming a plurality of island-like semiconductor films above an insulating transparent substrate; a step of forming a gate insulating film on each of the island-like semiconductor films; a step of forming first conductivity type LDD regions on both sides in the first island-like semiconductor film by leaving a channel region and forming a first conductivity type normally-on channel region having an impurity density equivalent to that of the LDD region in the second island-like semiconductor film; a step of forming a first gate electrode partially covering the LDD region and forming a second gate electrode above the normally-on channel region, and a step of forming a first conductivity type source/drain region having an impurity density higher than that of the LDD region in regions on the both sides of the gate electrode.
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International Search Report mailed Aug. 15, 2006.
Monbleau Davienne
Nixon & Vanderhye P.C.
Rodela Eduardo A
Sharp Kabushiki Kaisha
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