Memory device and method of fabricating the same

Details Memory device and method of fabricating the same Memory device and method of fabricating the same

Filed on

2007-03-15

Date issued

2009-06-02

Examiner

Mandala, Victor A (Department: 2826)

Patent Class

Active solid-state devices (e.g., transistors, solid-state diode

SubClass

Field effect device

SubSubClass

Having insulated electrode

Other Related Categories

C257S315000, C257S324000, C257SE29129

Type

Reexamination Certificate

Status

active

Patent number

07541639

Description

ABSTRACT:
A memory device and a method of fabricating the same. The memory device includes a substrate and a first gate electrode overlying the substrate. Overlying a top surface of the first gate electrode, a second gate electrode comprises end portions extending to spaces adjacent to the substrate and sidewalls of the first gate electrode. Further, a dielectric layer comprises a first portion sandwiched between the first gate electrode and the second gate electrode, and second portions extending from the first portion, sandwiched between the substrate and the end portions of the second gate electrode.

REFERENCES:
patent: 6011725 (2000-01-01), Eitan
patent: 6911691 (2005-06-01), Tomiie et al.
patent: 6963508 (2005-11-01), Shone
patent: 2005/0161701 (2005-07-01), Tomiie et al.
patent: 2007/0066014 (2007-03-01), Park et al.
patent: 2007/0166908 (2007-07-01), Min et al.

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