Plasma treatment of a semiconductor surface for enhanced...

Details Plasma treatment of a semiconductor surface for enhanced... Plasma treatment of a semiconductor surface for enhanced...

2005-11-30

2009-11-17

Luu, Chuong A. (Department: 2892)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S758000, C438S287000, C438S783000

Reexamination Certificate

active

07618902

ABSTRACT:
A method for forming a dielectric layer is provided. The method may include providing a semiconductor surface and etching a thin layer of the semiconductor substrate to expose a surface of the semiconductor surface, wherein the exposed surface is hydrophobic. The method may further include treating the exposed surface of the semiconductor substrate with plasma to neutralize a hydrophobicity associated with the exposed surface, wherein the exposed surface is treated using plasma with a power in a range of 100 watts to 500 watts and for duration in a range of 1 to 60 seconds. The method may further include forming a metal-containing layer on a top surface of the plasma treated surface using an atomic layer deposition process.

REFERENCES:
patent: 6674138 (2004-01-01), Halliyal et al.
patent: 6958277 (2005-10-01), Pomarede et al.
patent: 7326655 (2008-02-01), Joe
patent: 2004/0147101 (2004-07-01), Pomarede et al.
patent: 2006/0033678 (2006-02-01), Lubomirsky et al.
International Search Report issued in corresponding PCT Application No. PCT/US06/60775 mailed Oct. 1, 2008.

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