Method for manufacturing semiconductor module using...

Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S125000, C438S118000, C438S108000, C438S612000, C438S613000, C438S614000

Reexamination Certificate

active

07598117

ABSTRACT:
In a method for manufacturing a semiconductor module, a metal layer is formed on a support substrate. Then, first conductive posts and a first insulating layer are formed on the metal layer. The first insulating layer surrounds the sides of the first conductive posts. Then, second conductive posts are formed above the first conductive posts. The second conductive posts are electrically connected to the first conductive posts. Then, a second insulating layer is formed so as to cover the second conductive posts. The second insulating layer is made of adhesive resin. Finally, a semiconductor device is adhered to the second conductive posts by the second insulating layer while a gap between the first semiconductor device and the first insulating layer is sealed by the second insulating layer.

REFERENCES:
patent: 6603210 (2003-08-01), Kishimoto et al.
patent: 6784547 (2004-08-01), Pepe et al.
patent: 6951773 (2005-10-01), Ho et al.
patent: 13579111 (2002-07-01), None
patent: 1 207 555 (2002-05-01), None
patent: 2001-345418 (2001-12-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for manufacturing semiconductor module using... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing semiconductor module using..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing semiconductor module using... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4126138

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.