Method for fabricating landing plug of semiconductor device

Details Method for fabricating landing plug of semiconductor device Method for fabricating landing plug of semiconductor device

2007-12-26

2009-11-10

Dang, Phuc T (Department: 2892)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S778000, C438S783000, C257SE21294, C257SE21646

Reexamination Certificate

active

07615490

ABSTRACT:
A method of fabricating a landing plug of a semiconductor device includes performing a double patterning process to separately form a landing plug contact hole for a storage node and a landing plug contact hole for a bit line, thereby facilitating forming a device having a half pitch of 30 nm.

REFERENCES:
patent: 2004/0262769 (2004-12-01), Park
patent: 2008/0081408 (2008-04-01), Song
patent: 2008/0153276 (2008-06-01), Hwang et al.
patent: 2008/0284039 (2008-11-01), Colburn et al.
patent: 10-2003-0058638 (2003-07-01), None
Notice of Rejection for Korean Patent Application No. 10-2007-0124574, dated Feb. 25, 2009.

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