TFT array substrate and photo-masking method for fabricating...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate

Reexamination Certificate

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Details

C438S151000, C438S158000, C257S059000, C257S072000, C257S291000, C257SE27111, C257SE27113, C257SE29278

Reexamination Certificate

active

07491593

ABSTRACT:
An exemplary method for fabricating a thin film transistor array substrate (200) includes: providing an insulating substrate (201); coating a transparent conductive layer (202) and a gate metal layer (203) on the substrate; forming a gate electrode (213) and a pixel electrode (212) using a first photo-mask process; forming a gate insulating layer (204), an amorphous silicon layer (205), a doped amorphous silicon layer (206), and a source/drain metal layer (207) on the substrate; forming a plurality of source electrodes (227) and a plurality of drain electrodes (228) using a second photo-mask process; depositing a metal layer (208) on the substrate and the pixel electrodes; and forming a passivation layer (209) on the source electrodes, the drain electrodes and the channels and a plurality of metal contact layers (218) using a third photo-mask process.

REFERENCES:
patent: 5926702 (1999-07-01), Kwon et al.
patent: 2005/0046762 (2005-03-01), Kim et al.
patent: 2005/0101044 (2005-05-01), Cho et al.
patent: 2006/0141643 (2006-06-01), Shih
patent: 2007/0145436 (2007-06-01), Lin
patent: WO2004/057416 (2004-07-01), None

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