Semiconductor light emitting device

Details Semiconductor light emitting device Semiconductor light emitting device

2005-02-18

2009-08-04

Hu, Shouxiang (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S089000, C257S090000, C257S096000

Reexamination Certificate

active

07569863

ABSTRACT:
A semiconductor light emitting device is composed of a blue light emitting diode, a red light emitting layer grown epitaxially on the blue light emitting diode, and an insulating material containing a YAG fluorescent material. The red light emitting layer is made of, e.g., undoped In0.4Ga0.6N having a forbidden band width of 1.9 eV and formed on a p-type semiconductor layer to have a configuration consisting of a plurality of mutually spaced-apart islands.

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English language abstract of JP 2003-234505.
English language abstract of JP 2000-091703.
English language abstract of JP 2002-299686.
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English language abstract of JP 2000-082849.
English language abstract of JP 2002-217450.
English language abstract of JP 2003-318443.
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