Semiconductor die with reduced RF attenuation

Details Semiconductor die with reduced RF attenuation Semiconductor die with reduced RF attenuation

2007-09-12

2009-10-06

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S229000, C257S279000, C257S296000, C257S301000, C257S324000, C257S355000, C257S359000, C257S407000, C257SE21548

Reexamination Certificate

active

07598575

ABSTRACT:
The attenuation of an RF signal on a metal trace in a semiconductor die is substantially reduced by utilizing a number of RF blocking structures that lie on the surface of the substrate directly below the metal trace that carries the RF signal. The RF blocking structures include an isolation ring, and one or more doped regions that are formed inside the isolation ring.

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patent: 5859450 (1999-01-01), Clark et al.
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patent: 6621679 (2003-09-01), Segervall
patent: 6621680 (2003-09-01), Segervall
patent: 2002/0005543 (2002-01-01), Di Pede et al.
C. Patrick Yue and S. Simon Wong, “A Study on Substrate Effects of Silicon-Based RF Passive Components”, International Microwave Symposium Digest, Jun. 1999, pp. 1625-1628.
C. Patrick Yue and S. Simon Wong, “Design Strategy of On-Chip Inductors for Highly Integrated RF Systems”, Design Automation Conference Proceedings, Jun. 1999, pp. 982-987.
C. Patrick Yue and S. Simon Wong, “On-Chip Spiral Inductors with Patterned Ground Shields for Si-Based RF IC's”, IEEE Journal of Solid-State Circuits, vol. 33, No. 5, May 1998, pp. 743-752.

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