Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-03-14
2009-10-13
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S173000, C257S328000, C257S356000, C257S360000, C257S546000, C257SE29326, C257SE29327, C257SE29328
Reexamination Certificate
active
07602022
ABSTRACT:
To prevent the destruction of a semiconductor element due to negative resistance, and to reduce the dynamic resistance of a static electricity prevention diode, the ratio of the maximum electric field intensity during an avalanche and the average electric field in a strong electric field region, as well as the impurity density gradient in the vicinity of the strong electric field region are optimized. During avalanche breakdown, a depletion layer is formed across the entire high resistivity region, and its average electric field is kept to ½ or more of the maximum electric field intensity. The density gradients (the depths and impurity densities) of a p+region and of an n+region that form a p-n junction of the diode are controlled so that the density gradient in the neighborhood of the high resistivity region does not have negative resistance with respect to increase of the avalanche current.
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Harada Yuiichi
Ikura Yoshihiro
Kanemaru Hiroshi
Kumagai Naoki
Saitou Ryuu
Fuji Electric Device Technology Co. Ltd.
Huynh Andy
Rossi Kimms & McDowell LLP
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