Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2004-03-08
2009-06-02
Wojciechowicz, Edward (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S618000, C257S712000
Reexamination Certificate
active
07541644
ABSTRACT:
The semiconductor device has a silicon layer (SOI layer) (12) formed through a silicon oxide film (11) on a support substrate (10). A transistor (T1) is formed in the SOI layer (12). The wiring (17a) is connected with a source of the transistor (T1) through a contact plug (15a). A back metal (18) is formed on an under surface (back surface) of the support substrate (10) and said back metal (18) is connected with the wiring (17a) through a heat radiating plug (16). The contact plug (15a), the heat radiating plug (16) the wiring (17a) and the back metal (18) is made of a metal such as aluminum, tungsten and so on which has a higher thermal conductivity than that of the silicon oxide film (11) and the support substrate (10).
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Hirano Yuuichi
Ipposhi Takashi
Maeda Shigenobu
Maegawa Shigeto
Matsumoto Takuji
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Renesas Technology Corp.
Wojciechowicz Edward
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