Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2006-09-28
2009-11-03
Cao, Phat X (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S222000, C257S290000, C257S414000, C257S428000, C257S431000, C257SE31037, C257SE31032, C257SE31039
Reexamination Certificate
active
07612392
ABSTRACT:
Example embodiments relate to an image sensor and a fabrication method thereof. An image sensor may include a semiconductor substrate. A charge transfer structure may be formed on the semiconductor substrate. The charge transfer structure may include a gate insulating film that may be formed on a channel region in the semiconductor substrate between a photoelectric conversion region and charge detection region, and a transfer gate electrode that may be formed on the gate insulating film that may have a region doped with a first conductivity type impurity-doped region and a second conductivity type impurity-doped region which may be adjacent to each other.
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Office Action for corresponding Korean Application No. 10-2005-0093106 dated Sep. 29, 2006and English language translation thereof.
Jung Sang-Il
Yi Duk-Min
Cao Phat X
Garrity Diana C
Harness & Dickey & Pierce P.L.C.
Samsung Electronics Co,. Ltd.
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