Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2007-05-07

2009-02-03

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S257000

Reexamination Certificate

active

07485918

ABSTRACT:
A semiconductor device including a gate dielectric film provided on at least one site on a surface of a semiconductor substrate, at least one first gate electrode provided on the gate dielectric film, an inter-electrode dielectric film provided while covering a surface of the first gate electrode, at least partial film thickness of a portion covering a portion other than a corner portion that does not come into contact with the gate dielectric film from among a plurality of corner portions of the first gate electrode being formed to be smaller than at least partial film thickness of a portion covering the corner portion that does not come into contact with the gate dielectric film, and a second gate electrode provided while covering a surface of the inter-electrode dielectric film.

REFERENCES:
patent: 6391722 (2002-05-01), Koh
patent: 6498064 (2002-12-01), Tseng
patent: 11-204788 (1999-07-01), None

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