Semiconductor device with buried conductive layer

Details Semiconductor device with buried conductive layer Semiconductor device with buried conductive layer

2006-09-27

2009-12-29

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29275, C257SE21637

Reexamination Certificate

active

07638845

ABSTRACT:
A semiconductor device includes a first insulator formed at a part under a semiconductor layer, a second insulator formed under the semiconductor layer in an arranged manner avoiding the first insulator and having a relative dielectric constant different from that of the first insulator, a backgate electrode formed under the first and second insulators, a gate electrode formed on the semiconductor layer, and a source layer and a drain layer formed in the semiconductor layer to be respectively arranged on opposite lateral sides of the gate electrode.

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T. Sakai et al., “Separation by Bonding Si Islands (SBSI) for LSI Applications,” Second Internationl SiGe Technology and Device Meeting Abstract, SBSI Technology, pp. 230-231, May 2004.

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