Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-09-21
2009-02-03
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000, C257S306000, C257S307000, C257S310000, C257SE27084, C257SE27087
Reexamination Certificate
active
07485913
ABSTRACT:
A semiconductor memory device includes a memory cell and a dummy cell. The amount of leakage current per unit area in a capacitor in the dummy cell is larger than that in a capacitor in the memory cell.
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Ho Hoang-Quan T
Huynh Andy
McDermott Will & Emery LLP
Panasonic Corporation
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