Semiconductor memory device and method for fabricating the same

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S296000, C257S306000, C257S307000, C257S310000, C257SE27084, C257SE27087

Reexamination Certificate

active

07485913

ABSTRACT:
A semiconductor memory device includes a memory cell and a dummy cell. The amount of leakage current per unit area in a capacitor in the dummy cell is larger than that in a capacitor in the memory cell.

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patent: 2006/0150128 (2006-07-01), Zhu et al.
patent: 2002-198494 (2002-07-01), None

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