Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-11-20
2009-12-22
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE27104, C257SE29164
Reexamination Certificate
active
07635885
ABSTRACT:
An interlayer insulating film (14) covering a ferroelectric capacitor is formed and a contact hole (19) reaching a top electrode (11a) is formed in the interlayer insulating film (14). An Al wiring (17) connected to the top electrode (11a) via the contact hole (19) is formed on the interlayer insulating film (14). A planar shape of the contact hole (19) is an ellipse.
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Fujitsu Microelectronics Limited
Patton Paul E
Smith Zandra
Westerman Hattori Daniels & Adrian LLP
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