Nonvolatile semiconductor memory device and manufacturing...

Details Nonvolatile semiconductor memory device and manufacturing... Nonvolatile semiconductor memory device and manufacturing...

2005-01-12

2009-06-23

Ho, Tu-Tu V (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S411000, C257S315000, C257SE29309, C977S773000, C977S936000, C438S216000

Reexamination Certificate

active

07550802

ABSTRACT:
A nonvolatile semiconductor memory device which can shorten data writing and erasing time, significantly improve the endurance characteristic and be activated with low power consumption includes an insulating layer with electric insulation, wherein, a charge retention layer formed adjacent to a tunnel insulating film contains nano-particles comprised of a compound which is constituted from at least one single-element substance or chemical compound having a particle diameter of at most 5 nm functions as a floating gate, and which are independently dispersed with a density of from 10+12to 10+14particles per square centimeter.

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