Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making
Reexamination Certificate
2006-02-17
2009-06-02
Hamilton, Cynthia (Department: 1795)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Radiation sensitive composition or product or process of making
C548S100000, C526S256000, C526S257000, C549S012000, C549S027000, C549S026000, C540S491000, C544S005000, C522S904000, C522S031000, C522S009000, C522S015000, C522S025000, C430S922000, C430S905000, C430S910000, C430S296000, C430S326000, C430S325000, C430S330000
Reexamination Certificate
active
07541131
ABSTRACT:
The invention provides a resist composition for use in the production process of a semiconductor such as IC, in the production of a circuit substrate of liquid crystal, thermal head and the like or in other photofabrication processes, a compound for use in the resist composition and a pattern forming method using the resist composition, which are a resist composition comprising (A) a sulfonium salt represented by the following formula (I); and a pattern forming method using the resist composition:whereinR1represents an alkyl group or an aryl group,R2to R9each independently represents a hydrogen atom or a substituent and may combine with each other to form a ring,Z represents an electron-withdrawing divalent linking group,Xn−represents an n-valent anion,n represents an integer of 1 to 3, andm represents the number of anions necessary for neutralizing the electric charge.
REFERENCES:
patent: 3779778 (1973-12-01), Smith et al.
patent: 4090936 (1978-05-01), Barton
patent: 4318766 (1982-03-01), Smith
patent: 4491628 (1985-01-01), Ito et al.
patent: 4694029 (1987-09-01), Land
patent: 4708925 (1987-11-01), Newman
patent: 5045431 (1991-09-01), Allen et al.
patent: 6004721 (1999-12-01), Tan et al.
patent: 6548221 (2003-04-01), Uetani et al.
patent: 6680157 (2004-01-01), Fedynyshyn
patent: 6787281 (2004-09-01), Tao et al.
patent: 2004/0067433 (2004-04-01), Nirmal et al.
patent: 2005/0015865 (2005-01-01), Chaix et al.
patent: 1480078 (2004-11-01), None
patent: 2003-149800 (2003-05-01), None
patent: 2004-4557 (2004-01-01), None
patent: WO-03/072567 (2003-09-01), None
Allen et al “High performance acrylic polymers for chemically amplified photoresist applications”, J.Vac. Sci. Technol. B 9 (6), Nov./Dec. 1991, pp. 3357-3361.
Allen et al , “193 nm Single Layer Positive Resists Building Etch Resistance Into a High Resolution Imaging System”, Proceedings of SPIE, vol. 243, Jun. 1995, pp. 474 to 485.
FUJIFILM Corporation
Hamilton Cynthia
Sughrue & Mion, PLLC
LandOfFree
Resist composition, compound for use in the resist... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Resist composition, compound for use in the resist..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Resist composition, compound for use in the resist... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4114629