Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2007-08-30

2009-12-01

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S160000, C438S723000, C257SE21413, C257SE27111

Reexamination Certificate

active

07625785

ABSTRACT:
A semiconductor device having a crystalline semiconductor film with production of a cavity suppressed and a manufacturing method thereof A manufacturing method of a semiconductor device according to the invention comprises the steps of forming an amorphous silicon film on a substrate having an insulating surface, adding a metal element such as Ni for promoting crystallization to the amorphous silicon film, applying heat treatment to crystallize the amorphous silicon film, so that a crystalline silicon film is formed on the substrate, removing a silicon oxide film formed on the surface of the crystalline silicon film due to the heat treatment by a solution containing organic solvent and fluoride, and irradiating laser light or strong light to the crystalline silicon film.

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