Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2006-07-25
2009-02-10
Le, Vu A (Department: 2824)
Static information storage and retrieval
Floating gate
Particular connection
C365S185030
Reexamination Certificate
active
07489545
ABSTRACT:
Structures, systems and methods for transistors utilizing oxide-nitride nanolaminates are provided. One transistor embodiment includes a first source/drain region, a second source/drain region, and a channel region therebetween. A gate is separated from the channel region by a gate insulator. The gate insulator includes oxide-nitride nanolaminate layers to trap charge in potential wells formed by different electron affinities of the oxide-nitride nanolaminate layers.
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Ahn Kie Y.
Forbes Leonard
Le Vu A
Micro)n Technology, Inc.
Schwegman Lundberg & Woessner, P.A.
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