Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2005-07-12
2009-02-24
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257SE21648, C438S396000
Reexamination Certificate
active
07495311
ABSTRACT:
A semiconductor device having an MIM capacitor and a method of forming the same are provided. A lower electrode includes a plate electrode and a sidewall electrode. The plate electrode is formed by a patterning process preferably including a plasma anisotropic etching. The sidewall electrode is formed like a spacer on an inner sidewall of an opening exposing the plate electrode by a plasma entire surface anisotropic etching.
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Joo Heung-Jin
Kim Hyun-Ho
Kim Ki-Nam
Marger & Johnson & McCollom, P.C.
Pert Evan
Samsung Electronics Co,. Ltd.
Sandvik Ben P
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