Resist pattern forming method including uniform intensity...

Details Resist pattern forming method including uniform intensity... Resist pattern forming method including uniform intensity...

2008-04-14

2009-06-30

Huff, Mark F (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S313000

Reexamination Certificate

active

07553608

ABSTRACT:
A resist pattern forming method includes preparing a photomask for generating near-field light having an intensity distribution. The photomask has a light-transmissible base member, and a light-blocking film. The film has a micro-aperture adapted to expose an object to near-field light seeping out from the micro-aperture. The photomask has a periodic structure and a shift of a phase. The shift exists between recesses or projections adjacent to the micro-aperture. A difference in the intensity distribution of the near-field light in the area of the aperture is reduced. The photomask is arranged close to a photoresist film on a substrate. Light from a light source irradiates the photoresist film by way of the photomask to form a latent image based on the micro-aperture, and the photoresist film is developed to form a resist pattern on the substrate based on the latent image.

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Weast, et al.CRC Handbook of Chemistry and Physics, CRC Press, Inc., 61stEd., 1980, pp. E-392, E-393.

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