Method for controlling a reactive sputtering process

Details Method for controlling a reactive sputtering process Method for controlling a reactive sputtering process

1995-05-08

1996-09-17

Nguyen, Nam

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419223, 20429803, 20429807, 20429808, C23C 1434

Patent

active

055565204

ABSTRACT:
A method is proposed for controlling a reactive sputtering process wherein the working point on the physical characteristic curves, cathode voltage or working current intensity over reactive gas flow to the sputtering apparatus, defined by the value of one of the two factors determining the electrical power drain of the reactive sputtering process, is adjusted and maintained constant by metering the reactive gas, for example O.sub.2, to the process chamber. Further, the invention proposes a device for the practice of the method, wherein a sputtering apparatus is provided, comprising a controller 5 (reactive gas controller) and a control valve 8 for metering the reactive gas. Further, a signal line 15 is provided which carries the cathode voltage to the input of the controller in which the output of the controller is connected to the control valve via a line 16 which supplies the adjusting magnitude computed in the controller to the control valve.

REFERENCES:
patent: 4124474 (1978-11-01), Bomchil et al.
patent: 4201645 (1980-05-01), Riegert
patent: 4283260 (1981-08-01), Thomas et al.
patent: 4500408 (1985-02-01), Boys et al.
patent: 5108569 (1992-04-01), Gilboa et al.
Patent Abstracts of Japan 60-70174 A., C-298, Aug. 10, 1985, vol. 9, No. 200.
62-182273 A, C-472, Jan. 30, 1988, vol. 12, No. 33.
Applied Physics A. Solids and Surfaces. Bd. A51, Nr. 5, Nov. 1990, Heidelberg De Seiten 423-426; Rao et al.: Preparation and Characterization of Cu-Cu20 Cermet Films, Seite 424, Spalte 2, Zeile 19--Seite 425, Spalte 1, Zeile 8.

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