Semiconductor device including a capacitance

Details Semiconductor device including a capacitance Semiconductor device including a capacitance

2007-08-17

2009-10-27

Dickey, Thomas L (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29345

Reexamination Certificate

active

07608879

ABSTRACT:
It is an object to obtain a semiconductor device including a capacitance having a great Q-value. In an SOI substrate comprising a support substrate (165), a buried oxide film (166) and an SOI layer (171), an isolating oxide film167(167ato167c) is selectively formed in an upper layer portion of the SOI layer (171) with a part of the SOI layer (171) remaining as a P−well region (169). Consequently, an isolation (partial isolation) structure is obtained. An N+diffusion region (168) is formed in the SOI layer (171) between the isolating oxide films (167a) and (167b) and a P+diffusion region (170) is formed in the SOI layer (171) between the isolating oxide films (167b) and (167c). Consequently, there is obtained a junction type variable capacitance (C23) having a PN junction surface of the P−well region (169) provided under the isolating oxide film (167b) and the N+diffusion region (168).

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