Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure
Reexamination Certificate
2006-12-05
2009-11-10
Dang, Phuc T (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Test or calibration structure
C257S057000, C257S060000, C438S017000, C438S018000, C324S765010
Reexamination Certificate
active
07615781
ABSTRACT:
There is a room for improvement in conventional semiconductor devices in terms of reducing the chip area. A semiconductor device1comprises an evaluation transistor10(first characteristic evaluation device), an evaluation transistor (second characteristic evaluation device), measurement pads30(first measurement pads) and measurement pads40(second measurement pads). The measurement pad30and the measurement pad40are provided in different layers in the interconnect layer.
REFERENCES:
patent: 6747471 (2004-06-01), Chen et al.
patent: 6950356 (2005-09-01), Tao
patent: 2006/0138614 (2006-06-01), Kimura
patent: 2007/0109003 (2007-05-01), Shi et al.
patent: 2000-214228 (2000-08-01), None
patent: 2000-260823 (2000-09-01), None
Dang Phuc T
McGinn IP Law Group PLLC
NEC Electronics Corporation
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