Flash memory device and fabricating method thereof

Details Flash memory device and fabricating method thereof Flash memory device and fabricating method thereof

2005-12-30

2009-10-20

Coleman, W. David (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27103, C438S264000, C438S211000

Reexamination Certificate

active

07605419

ABSTRACT:
A flash memory device includes a floating gate formed on a substrate, sidewall gates formed on sidewalls of the floating gate, an interlayer insulating layer formed the floating gate and the sidewall gates, and a control gate formed on the interlayer insulating layer. The fabricating method of a flash memory device includes forming a floating gate on a substrate, forming sidewall gates at sidewalls of the floating gate, forming an interlayer insulating layer on the floating gate and the sidewall gates, and forming a control gate on the interlayer insulating layer.

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