Multi-channel transistor structure and method of making thereof

Details Multi-channel transistor structure and method of making thereof Multi-channel transistor structure and method of making thereof

2008-02-26

2009-10-27

Lindsay, Jr., Walter L (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S351000, C257S352000, C257SE29131, C257SE21693

Reexamination Certificate

active

07608893

ABSTRACT:
A method of forming an electronic device includes, forming a first channel coupled to a first current electrode and a second current electrode and forming a second channel coupled to the first current electrode and the second current electrode. The method also includes the second channel being substantially parallel to the first channel within a first plane, wherein the first plane is parallel to a major surface of a substrate over which the first channel lies. A gate electrode is formed surrounding the first channel and the second channel in a second plane, wherein the second plane is perpendicular to the major surface of the substrate. The resulting semiconductor device has a plurality of locations with a plurality of channels at each location. At small dimensions the channels form quantum wires connecting the source and drain.

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