Semiconductor device having a high withstand voltage

Details Semiconductor device having a high withstand voltage Semiconductor device having a high withstand voltage

2004-06-10

2009-08-25

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29027, C257SE29118, C257SE29129

Reexamination Certificate

active

07579652

ABSTRACT:
To present a semiconductor device capable of operating stably even at large current, by lessening current concentration into the corners of contact opening after switching off and suppressing local heat generation without raising the ON voltage. In an insulated gate transistor divided by P field region111and gate electrode106, having N+ emitter region104and P+ emitter region100, and controlling conduction between emitter and collector by voltage applied to gate electrode106, the shape of contact opening108contacting emitter (N+ emitter region104and P+ emitter region100) and emitter electrode is formed of curved lines at four corners. Hence, eliminating right-angle apex, hole current from the field region into the emitter electrode after switching off is prevented from concentrating at one point.

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English translation of Notification of Reason(s) for Refusal, Appln. No. 2003-195498 issued Oct. 16, 2007.

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