Semiconductor device having a trench gate and method of...

Details Semiconductor device having a trench gate and method of... Semiconductor device having a trench gate and method of...

2008-01-29

2009-11-24

Doan, Theresa T (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S333000, C438S270000

Reexamination Certificate

active

07622770

ABSTRACT:
A method of fabricating a semiconductor device having a trench gate is provided. First, a semiconductor substrate having a trench etch mask thereon is provided. The semiconductor substrate is etched to form a first trench having a first depth using the trench etch mask as a shield. Impurities are doped into the semiconductor substrate through the first trench to form a doped region. The doped region and the semiconductor substrate underlying the first trench are etched to form a second trench having a second depth greater than the first depth, wherein the second trench has a sidewall and a bottom. A gate insulating layer is formed on the sidewall and the bottom of the second trench. A trench gate is formed in the second trench.

REFERENCES:
patent: 5183775 (1993-02-01), Levy
patent: 5424231 (1995-06-01), Yang
patent: 6188104 (2001-02-01), Choi et al.
patent: 6852597 (2005-02-01), Park et al.
patent: 6929998 (2005-08-01), Chen et al.
patent: 2005/0173744 (2005-08-01), Kim et al.

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