Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated...
Reexamination Certificate
2008-06-12
2009-12-08
Nguyen, Cuong Q (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
C257SE21122, C257SE21336, C438S406000, C438S455000, C438S456000, C438S459000, C438S480000, C438S514000, C438S530000
Reexamination Certificate
active
07629666
ABSTRACT:
A partially completed multi-layered substrate, e.g., silicon on silicon. The substrate has a thickness of material from a first substrate. The thickness of material comprises a first face region. The substrate has a second substrate having a second face region. Preferably, the first face region of the thickness of material is joined to the second face region of the second substrate. The substrate has an interface region formed between the first face region of the thickness of material and the second face region of the second substrate. A plurality of particles are implanted within a portion of the thickness of the material and a portion of the interface region to electrically couple a portion of the thickness of material to a portion of the second substrate.
REFERENCES:
patent: 2008/0041517 (2008-02-01), Moriceau et al.
Nguyen Cuong Q
Silicon Genesis Corporation
Townsend and Townsend / and Crew LLP
Tran Trang Q
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