Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-06-22
2009-06-23
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S618000
Reexamination Certificate
active
07550377
ABSTRACT:
A method for fabricating a single-damascene opening is described. The method includes providing a substrate having a conductive line formed therein. A barrier layer, a dielectric layer, a metal hard mask layer, a silicon oxynitride layer, a bottom antireflection layer and a patterned photoresist layer are sequentially formed on the substrate. The bottom antireflection layer, the silicon oxynitride layer and the metal hard mask layer that are not covered by the patterned photoresist layer are removed in a single process step, until a part of the surface of the dielectric layer is exposed. Thereafter, the patterned photoresist layer and the bottom antireflection layer are removed. Further using the silicon oxynitride layer and the metal hard mask layer as a mask, a portion of the dielectric layer and a portion of the barrier layer are removed to form a damascene opening that exposes the surface of the conductive line.
REFERENCES:
patent: 6103456 (2000-08-01), Tobben et al.
patent: 6309962 (2001-10-01), Chen et al.
patent: 6638871 (2003-10-01), Wang et al.
patent: 2005/0037605 (2005-02-01), Kim et al.
patent: 1433062 (2003-07-01), None
Liu Ming-Hsing
Yu Chia-Hsiun
Jianq Chyun IP Office
Perkins Pamela E
Smith Zandra V.
United Microelectronics Corp.
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