Method of optically transferring a pattern from a mask...

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C430S005000

Reexamination Certificate

active

07575852

ABSTRACT:
An oriented assist feature is described that permits transferring of a lithographic pattern corresponding to an integrated circuit from a mask onto a semiconductor substrate. The oriented assist feature does not exhibit a forbidden pitch phenomenon, thereby providing a wide photo process window for a hole pattern.

REFERENCES:
patent: 5725969 (1998-03-01), Lee
patent: 6905899 (2005-06-01), Yang
patent: 2002/0045106 (2002-04-01), Baselmans et al.
patent: 2004/0009409 (2004-01-01), Hwang et al.
patent: 2004/0038135 (2004-02-01), Griesinger et al.
patent: 2004/0111693 (2004-06-01), Lin et al.
patent: 2005/0076321 (2005-04-01), Smith

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of optically transferring a pattern from a mask... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of optically transferring a pattern from a mask..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of optically transferring a pattern from a mask... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4100320

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.