Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-11-16
2009-08-25
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S369000, C257S250000, C257S365000, C257S366000, C257S392000, C257SE29158, C257SE29126, C257SE29128, C257SE29134, C257SE29160, C257SE29264, C257SE29269, C257SE21177, C257SE21179, C257SE21190, C257SE21194, C257SE21621, C257SE21623, C257SE21635, C257S288000, C438S199000
Reexamination Certificate
active
07579660
ABSTRACT:
A semiconductor device includes a substrate including a semiconductor layer at a surface, a gate insulating film disposed on the semiconductor layer, and a gate electrode disposed on the gate insulating film. The gate electrode includes a conductive layer consisting of a nitride of a predetermined metal in contact with the gate insulating film. The conductive layer is formed by stacking a first film consisting of a nitride of the predetermined metal and a second film consisting of the predetermined metal, and diffusing nitrogen from the first film to the second film by solid-phase diffusion.
REFERENCES:
patent: 6864163 (2005-03-01), Yu et al.
patent: 7148100 (2006-12-01), Kim et al.
patent: 2002/0096724 (2002-07-01), Liang et al.
patent: 2005/0110098 (2005-05-01), Yoshihara
patent: 2005-79512 (2005-03-01), None
Akiyama Koji
Lulu Zhang
Ohno Morifumi
Lopez Fei Fei Yeung
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Oki Electric Industry Co. Ltd.
Tokyo Electron Limited
Tran Minh-Loan T
LandOfFree
Semiconductor device and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and manufacturing method thereof will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4100316