Manufacturing method of semiconductor device, and substrate...

Details Manufacturing method of semiconductor device, and substrate... Manufacturing method of semiconductor device, and substrate...

2004-11-19

2009-02-24

Everhart, Caridad M (Department: 2895)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S935000, C438S788000, C257SE21477, C118S7230AN, C118S506000

Reexamination Certificate

active

07494941

ABSTRACT:
At a time of a substrate loading step or/and at a time of a substrate unloading step, particles are effectively eliminated from a reaction chamber.Provided are a step of loading at least one wafer200into a reaction chamber201, a step of introducing reaction gas into the reaction chamber201, and exhausting an inside of the reaction chamber201, thereby processing the wafer200, and a step of unloading the processed wafer200from the reaction chamber201. In the step of loading the wafer200or/and in the step of unloading the wafer200, the inside of the reaction chamber201is exhausted at a larger exhaust flow rate than an exhaust flow rate in the step of processing the wafer200.

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