Semiconductor device with NMOS transistors arranged...

Details Semiconductor device with NMOS transistors arranged... Semiconductor device with NMOS transistors arranged...

2006-05-16

2009-08-04

Jackson, Jr., Jerome (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S206000, C257SE27062, C257S067000

Reexamination Certificate

active

07569894

ABSTRACT:
A semiconductor device includes a plurality of PMOS transistors formed on a semiconductor substrate; and a plurality of NMOS transistors formed on the semiconductor substrate. The plurality of PMOS transistors are electrically isolated from each other by a device isolation structure formed in the semiconductor substrate. The plurality of NMOS transistors are continuously formed in a first direction such that a sequence of N-type diffusion layers of the plurality of NMOS transistors extends in the first direction. One of the plurality of PMOS transistors and one of the plurality of NMOS transistors share a gate electrode.

REFERENCES:
patent: 5334861 (1994-08-01), Pfiester et al.
patent: 5714394 (1998-02-01), Kadosh et al.
patent: 2003/0127697 (2003-07-01), Ohta et al.
patent: 2001-345430 (2001-12-01), None
patent: 2003-203989 (2003-07-01), None

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