Method of manufacturing an insulated gate field effect semicondu

Details Method of manufacturing an insulated gate field effect semicondu Method of manufacturing an insulated gate field effect semicondu

1994-03-11

1999-06-15

Dutton, Brian

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438154, H01L 2100, H01L 2184

Patent

active

059131128

ABSTRACT:
An LDD structure is manufactured to have a desired aspect ratio of the height to the width of a gate electrode. The gate electrode is first deposited on a semiconductor substrate followed by ion implantation with the gate electrode as a mask to form a pair of impurity regions. The gate electrode is then anodic oxidized to form an oxide film enclosing the electrode. With the oxide film as a mask, highly doped regions are formed by ion implantation in order to define lightly doped regions between the highly doped regions and the channel region located therebetween.

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