Method of manufacturing an insulaed gate transistor

Details Method of manufacturing an insulaed gate transistor Method of manufacturing an insulaed gate transistor

1996-01-17

1999-06-15

Dutton, Brian

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438164, 438564, H01L 2100, H01L 2184, H01L 2122, H01L 2138

Patent

active

059131110

ABSTRACT:
This invention provides a transistor manufacture method comprising the steps of forming, on a semiconductor substrate, an insulating film being made open at least in an introducing portion through which an impurity for forming a drain region other than a lightly-doped region is introduced, then forming a gate electrode and a drain electrode each containing an impurity, and then introducing the impurity through between the gate electrode and the drain electrode to thereby form the lightly-doped region; and introducing the impurity from the drain electrode through the impurity introducing portion with heat treatment, to thereby form the drain region. A transistor manufactured by the above method is also provided.

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