Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-01-17
2009-12-22
Lee, Eugene (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S004000, C257S249000, C257S347000
Reexamination Certificate
active
07635889
ABSTRACT:
Conductive layers having knots are adjacently formed with uniform distance therebetween. Droplets of the conductive layers are discharged to stagger centers of the droplets in a length direction of wirings so that the centers of the discharged droplets are not on the same line in a line width direction between the adjacent conductive layers. Since the centers of the droplets are staggered, parts of the conductive layers each having a widest line width (the widest width of knot) are not connected to each other, and the conductive layers can be formed adjacently with a shorter distance therebetween.
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Fujii Gen
Isa Toshiyuki
Kawamata Ikuko
Morisue Masafumi
Cook Alex Ltd.
Lee Eugene
Semiconductor Energy Laboratory Co,. Ltd.
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