Method for production of thin-film semiconductor device

Details Method for production of thin-film semiconductor device Method for production of thin-film semiconductor device

2008-01-09

2009-06-23

Garber, Charles D. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S157000, C438S652000, C438S653000, C438S502000, C438S509000, C257SE21372, C257SE21411, C257SE21077, C257SE21082

Reexamination Certificate

active

07550328

ABSTRACT:
Disclosed herein is a method for production of a thin-film semiconductor device which includes, a first step to form a gate electrode on a substrate, a second step to form a gate insulating film of silicon oxynitride on the substrate in such a way as to cover the gate electrode, a third step to form a semiconductor thin film on the gate insulating film, and a fourth step to perform heat treatment in an oxygen-containing oxidizing atmosphere for modification through oxygen binding with oxygen-deficient parts in the silicon oxynitride film constituting the gate insulating film.

REFERENCES:
patent: 2002/0130363 (2002-09-01), Yamazaki et al.
patent: 2007/0040172 (2007-02-01), Kawakami et al.
patent: 04-283967 (1992-10-01), None
patent: 08-293607 (1996-11-01), None
patent: 11-330477 (1999-11-01), None
patent: 2003-124469 (2003-04-01), None
patent: 2003-209261 (2003-07-01), None
Japanese Office Action issued Feb. 24, 2009 for corresponding Japanese Application No. 2007-020614.

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